Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC £ 75°C) 875 W IC Device Current* 16.0 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptio...
AM0608-200: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC £ 75°C) 875 W IC Device Current* 16.0 A VCC Collector-Supply Voltage* 55 V TJ Junction...
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Features: · Refractory/Gold Metallization· Internal Input Matching· Metal/Ceramic Hermetic Package...
Features: SpecificationsDescriptionThe AM0608-070 is an internally-matched, common base silicon bi...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 1500 ...
Symbol | Parameter | Value | Unit |
PDISS | Power Dissipation* (TC £ 75°C) | 875 | W |
IC | Device Current* | 16.0 | A |
VCC |
Collector-Supply Voltage*
|
55 | V |
TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
TSTG | Storage Temperature | - 65 to +200 | °C |