Features: · Refractory/Gold Metallization· Internal Input Matching· Metal/Ceramic Hermetic Package· POUT = 20 W Min.· GP = 9.0 dB GainApplication· Avionics ApplicationsSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 100 W IC Device ...
AM0608-020: Features: · Refractory/Gold Metallization· Internal Input Matching· Metal/Ceramic Hermetic Package· POUT = 20 W Min.· GP = 9.0 dB GainApplication· Avionics ApplicationsSpecifications Symbol ...
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Features: SpecificationsDescriptionThe AM0608-070 is an internally-matched, common base silicon bi...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC £ 75°C) ...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 1500 ...
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* (TC 100°C) |
100 |
W |
IC |
Device Current* |
2.4 |
A |
VCC |
Collector-Supply Voltage* |
40 |
V |
TJ |
Junction Temperature (Pulsed RF Operation) |
250 |
°C |
TSTG |
Storage Temperature |
-65 to +150 |
°C |
The AM0608-020 is an internally-matched, common base silicon bipolar device optimized for pulsed applications in the 600 750 MHz frequency range. Housed in the popular IMPACTM hermetic metal/ceramic package,this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability.