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ACTS10MS

Features: • 1.25 Micron Radiation Hardened SOS CMOS• Total Dose 300K RAD (Si)• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)• SEU LET Threshold >80 MEV-cm2/mg• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse• Latch-Up Free Under Any Con...

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SeekIC No. : 004268107 Detail

ACTS10MS: Features: • 1.25 Micron Radiation Hardened SOS CMOS• Total Dose 300K RAD (Si)• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)• SEU LET Threshold >80 ...

ACTS10MS Data Sheet

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Part Number:
ACTS10MS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)
• SEU LET Threshold >80 MEV-cm2/mg
• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
   - VIL = 0.8V Max
   - VIH = VCC/2V Min
• Input Current 1µA at VOL, VOH


Pinout

Connection Diagram


Specifications

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . .  -0.5V to +6.0V
Input Voltage Range. . . . . . . . . . . . . . . . -0.5V to VCC +0.5V
DC Input Current, Any One Input  . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG) . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . .+265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
Thermal Impedance                                         JA         JC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.4W
Maximum Device Power Dissipation. . . . . . . . . . . . . . (TBD)W
Gate Count  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Gates


Description

The Intersil ACTS10MS is a radiation hardened triple three-input NAND gate. A high on all inputs forces the output to a low state.

The ACTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.




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