Features: • VDS(MAX) = 30V• ID(MAX) = 8A @ 25• Low Gate Charge• Low RDS(ON):• 24 m @VGS = 10V• 35 m @ VGS = 4.5VApplication• DC-DC converters for mobile CPUs• Battery-powered portable equipment• High power density DC - DC supplies• Power ...
AAT9121: Features: • VDS(MAX) = 30V• ID(MAX) = 8A @ 25• Low Gate Charge• Low RDS(ON):• 24 m @VGS = 10V• 35 m @ VGS = 4.5VApplication• DC-DC converters for mobile CPU...
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Symbol |
Description |
Value |
Units | |
VDS |
Drain-Source Voltage |
30 |
V | |
VGS |
Gate-Source Voltage |
±20 | ||
ID |
Continuous Drain Current @ TJ=1501 |
TA =25 |
±8.0 |
A |
TA =70 |
±6.4 | |||
IDM |
Pulsed Drain Current 2 |
±24 | ||
IS |
Continuous Source Current (Source-Drain Diode)1 |
2.25 | ||
PD |
Maximum Power Dissipation 1 |
TA =25 |
2.5 |
W |
TA =70 |
1.6 | |||
TJ, TSTG |
Operating Junction and Storage Temperature Range |
-55 to 150 |
The AAT9121 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size