AAT9060

Features: • VDS(MAX) = 30V• ID(MAX) 1 = 39A @ TC = 25°C• IAPP(MAX) = 12.5A in typical computer application• Low RDS(ON): -16 mΩ @VGS = 10V -27 mΩ @VGS = 4.5VApplication• DC-DC converters• High current load switches• LDO outputSpecifications ...

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SeekIC No. : 004261287 Detail

AAT9060: Features: • VDS(MAX) = 30V• ID(MAX) 1 = 39A @ TC = 25°C• IAPP(MAX) = 12.5A in typical computer application• Low RDS(ON): -16 mΩ @VGS = 10V -27 mΩ @VGS = 4.5VAppli...

floor Price/Ceiling Price

Part Number:
AAT9060
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/8

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Product Details

Description



Features:

• VDS(MAX) = 30V
• ID(MAX) 1 = 39A @ TC = 25°C
IAPP(MAX) = 12.5A in typical computer application
• Low RDS(ON):
  - 16 mΩ @VGS = 10V
  - 27 mΩ @VGS = 4.5V



Application

• DC-DC converters
• High current load switches
• LDO output



Specifications

Symbol Description Value Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 A
ID Continuous Drain Current @ TJ=150°C 1 TC = 25°C ±39
TC = 70°C ±31
IDM Pulsed Drain Current 3 ±60
IS Continuous Source Current (Source-Drain Diode) 1 20
PD Maximum Power Dissipation 1 TC = 25°C 41 W
TC = 70°C 26
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C

Notes:
1. Based on thermal dissipation from junction to case. RJC + RCA = RJA where the case thermal reference is defined as the solder mounting surface of the drain tab. RJC is guaranteed by design, however RCA is determined by the PCB design. Package current is limited to 30A DC and 60A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 µs.




Description

The AAT9060 30V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.




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