Features: • VDS(MAX) = 30V• ID(MAX) 1 = 39A @ TC = 25°C• IAPP(MAX) = 12.5A in typical computer application• Low RDS(ON): -16 mΩ @VGS = 10V -27 mΩ @VGS = 4.5VApplication• DC-DC converters• High current load switches• LDO outputSpecifications ...
AAT9060: Features: • VDS(MAX) = 30V• ID(MAX) 1 = 39A @ TC = 25°C• IAPP(MAX) = 12.5A in typical computer application• Low RDS(ON): -16 mΩ @VGS = 10V -27 mΩ @VGS = 4.5VAppli...
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Symbol | Description | Value | Units | |
VDS | Drain-Source Voltage | 30 | V | |
VGS | Gate-Source Voltage | ±20 | A | |
ID | Continuous Drain Current @ TJ=150°C 1 | TC = 25°C | ±39 | |
TC = 70°C | ±31 | |||
IDM | Pulsed Drain Current 3 | ±60 | ||
IS | Continuous Source Current (Source-Drain Diode) 1 | 20 | ||
PD | Maximum Power Dissipation 1 | TC = 25°C | 41 | W |
TC = 70°C | 26 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
Notes:
1. Based on thermal dissipation from junction to case. RJC + RCA = RJA where the case thermal reference is defined as the solder mounting surface of the drain tab. RJC is guaranteed by design, however RCA is determined by the PCB design. Package current is limited to 30A DC and 60A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 µs.
The AAT9060 30V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.