Features: • VDS(MAX) = -20V• ID(MAX) 1 = -3.0A @ 25°C• Low RDS(ON):• 100 m @ VGS = -4.5V• 175 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cordless Telephones• Battery-powered portable equipmentSpecifications Symbol Description Va...
AAT7361: Features: • VDS(MAX) = -20V• ID(MAX) 1 = -3.0A @ 25°C• Low RDS(ON):• 100 m @ VGS = -4.5V• 175 m @ VGS = -2.5VApplication• Battery Packs• Cellular & Cord...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
• VDS(MAX) = -20V
• ID(MAX) 1 = -3.0A @ 25°C
• Low RDS(ON):
• 100 m @ VGS = -4.5V
• 175 m @ VGS = -2.5V
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
Symbol | Description | Value | Units | |
VDS | Drain-Source Voltage | -20 | V | |
VGS | Gate-Source Voltage | ±12 | ||
ID | Continuous Drain Current @ TJ=150°C 1 | TA = 25°C | ±3.0 | A |
TA = 70°C | ±2.4 | |||
IDM |
Pulsed Drain Current 2 | ±9 | ||
IS | Continuous Source Current (Source-Drain Diode) 1 | -1.0 | ||
PD |
Maximum Power Dissipation 1 | TA = 25°C | 1.4 | W |
TA = 70°C | 0.9 | |||
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to 150 | °C |
The AAT7361 is a low threshold dual MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the footprint of a TSOP6 package.