Features: Single Bias Supply Operation (5.5 V) 18 dB Typical Small Signal Gain19 dBm Typical P1 dBOutput Power at 39 GHz0.25m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temper...
AA038P5-00: Features: Single Bias Supply Operation (5.5 V) 18 dB Typical Small Signal Gain19 dBm Typical P1 dBOutput Power at 39 GHz0.25m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to M...
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Features: Single Bias Supply Operation (5 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOut...
Features: Surface Mount Package17 dB Typical Gain Output Power16 dBm Typical P1 dBSingle Voltage O...
Features: Single Gate and Drain Biases25 dBm Typical P1 dBOutput Power at 31 GHz11 dB Typical Smal...
Alpha's three-stage reactively-matched Ka band GaA MMIC amplifier AA038P5-00 has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37-39 GHz.The chip use Alpha's proven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process.All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance.A broad range of applications exist in both the high reliability and commercial areas where power and gain are required.