Features: Single Bias Supply Operation (5 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOutput Power at 28 GHz0.25m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temperatu...
AA031P1-00: Features: Single Bias Supply Operation (5 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOutput Power at 28 GHz0.25m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-...
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Features: Surface Mount Package17 dB Typical Gain Output Power16 dBm Typical P1 dBSingle Voltage O...
Features: Single Gate and Drain Biases25 dBm Typical P1 dBOutput Power at 31 GHz11 dB Typical Smal...
Features: Surface Mount Package 11 dB Gain24 dBm P1 dBOutput Power100% DC and RF TestingPinoutSpec...
Alpha's three-stage reactively-matched 28¨C32 G GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz.The chip uses Alpha's proven 0.25?m MESFET technology,and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.Designed for 28-32 GHz LMDS and digital radio bands.