Features: Single Bias Supply Operation (5 V) 7 dB Typical Small Signal Gain 14 dBm Typical P1 dB Output Power 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 MT 2010Specifications Characteristic Value Operating Temperature (TC) -55°C to +90°C ...
AA038P1-00: Features: Single Bias Supply Operation (5 V) 7 dB Typical Small Signal Gain 14 dBm Typical P1 dB Output Power 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD...
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Features: 3.8 dB Noise Figure 18 dB Gain+5 dBm Output PowerRugged, Reliable PackageSingle Voltage ...
Features: Surface Mount Package3.8 dB Noise Figure 18 dB Gain+5 dBm Output PowerSingle Voltage Ope...
Features: Single Bias Supply Operation (4.5 V)3.8 dB Typical Noise Figure at 38 GHz17 dB Typical S...
Characteristic | Value |
Operating Temperature (TC) | -55°C to +90°C |
Storage Temperature (TST) | -65°C to +150°C |
Bias Voltage (VD) | 7 VDC |
Power In (PIN) | 16 dBm |
Junction Temperature (TJ) | 175°C |
Alpha's single-stage, reactively-matched 3639 GHz GaAs MMIC driver amplifier AA038P1-00 has a typical small signal gain of 7 dB with a typical P1 dB of 14 dBm at 38 GHz. The chip uses Alpha's proven 0.25 mm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy or eutectic die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 3639 GHz digital radio band.