Features: ·Fast access times: 6.5/7.5/8.0 ns(153/133/117 MHz)·Single 3.3V±5% power supply·Synchronous burst function·Individual Byte Write control and Global Write·Three separate chip enables allow wide range of options for CE control, address pipelining·Selectable BURST mode·SLEEP mode (ZZ pin) p...
A63L83361: Features: ·Fast access times: 6.5/7.5/8.0 ns(153/133/117 MHz)·Single 3.3V±5% power supply·Synchronous burst function·Individual Byte Write control and Global Write·Three separate chip enables allow ...
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The A63L83361 is a high-speed SRAM containing 9M bits of bit synchronous memory, organized as 256K words by 36 bits.
The A63L83361 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output buffer and a 256K X 36 SRAM core to provide a wide range of data RAM applications.
The positive edge triggered single clock input (CLK) of A63L83361 controls all synchronous inputs passing through the registers. Synchronous inputs include all addresses (A0 - A16), all data inputs (I/O1 - I/O36), active LOW chip enable (CE ), two additional chip enables (CE2,CE2 ), burst control inputs (ADSC ,ADSP , ADV ), byte write enables (BWE ,BW1 ,BW2 ,BW3 ,BW4 ) and Global Write (GW ). Asynchronous inputs include output enable ( OE ), clock (CLK), BURST mode (MODE) and SLEEP mode (ZZ).
Burst operations can be initiated with either the address status processor (ADSP ) or address status controller (ADSC ) input pin. Subsequent burst sequence burst addresses can be internally generated by the A63P7336 and controlled by the burst advance (ADV ) pin. Write cycles are internally self-timed and synchronous with the rising edge of the clock (CLK).
This feature of A63L83361 simplifies the write interface. Individual Byte enables allow individual bytes to be written. BW1 controls I/O1 - I/O9, BW2 controls I/O10 - I/O18, BW3 controls I/O19 - I/O27, and BW4 controls I/O28 - I/O36, all on the condition thatBWE is LOW.GW LOW causes all bytes to be written.