A63L0636

The A63L0636E is a high-speed SRAM containing 36M bits of bit synchronous memory, organized as 1024K words by 36 bits.

The A63L0636E combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output registers and a 1MX36 SRAM core to provide a wide range of data RAM applications.

The positive edge triggered single clock input (CLK) controls all synchronous inputs passing through the registers. Synchronous inputs include all addresses (A0 - A16), all data inputs (I/O1 - I/O36), active LOW chip enable (CE ), two additional chip enables (CE2,CE2 ), burst control inputs (ADSC ,ADSP , ADV ), byte write enables (BWE ,BW1 ,BW2 ,BW3 ,BW4 ) and Global Write (GW ). Asynchronous inputs include output enable ( OE ), clock (CLK), BURST mode (MODE) and SLEEP mode (ZZ).

Burst operations can be initiated with either the address status processor (ADSP ) or address status controller (ADSC ) input pin. Subsequent burst sequence burst addresses can be internally generated by the A63P7336 and controlled by the burst advance (ADV ) pin. Write cycles are internally self-timed and synchronous with the rising edge of the clock (CLK).

This feature of A63L0636 simplifies the write interface. Individual Byte enables allow individual bytes to be written. BW1 controls I/O1 - I/O9, BW2 controls I/O10 - I/O18, BW3 controls I/O19 - I/O27, and BW4 controls I/O28 - I/O36, all on the condition thatBWE is LOW.GW LOW causes all bytes to be written.