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A28F200BR-B

Features: Intel SmartVoltage Technology 5V or 12V Program/Erase 5V Read OperationVery High Performance Read 80 ns Max. Access Time, 40 ns Max. Output Enable TimeLow Power Consumption Maximum 65 mA Read Current at 5Vx8/x16-Selectable Input/Output Bus ...

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SeekIC No. : 004260034 Detail

A28F200BR-B: Features: Intel SmartVoltage Technology 5V or 12V Program/Erase 5V Read OperationVery High Performance Read 80 ns Max. Access Time, 40 ns Max. Output Enable TimeLow P...

A28F200BR-B Data Sheet

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Part Number:
A28F200BR-B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Intel SmartVoltage Technology
 5V or 12V Program/Erase
 5V Read Operation
Very High Performance Read
 80 ns Max. Access Time,
  40 ns Max. Output Enable Time
Low Power Consumption
 Maximum 65 mA Read Current at 5V
x8/x16-Selectable Input/Output Bus
 High Performance 16- or 32-bit CPUs
Optimized Array Blocking Architecture
 One 16-KB Protected Boot Block
 Two 8-KB Parameter Blocks
 One 96-KB Main Block
 One 128-KB Main Block
 Top or Bottom Boot Locations
Hardware-Protection for Boot Block
Software EEPROM Emulation with Parameter Blocks
Automotive Temperature Operation
 -40°C to +125°C
Extended Cycling Capability
 30,000 Block Erase Cycles for
Parameter Blocks
 1,000 Block Erase Cycles for Main Blocks
Automated Word/Byte Program and Block Erase
 Industry-Standard Command User
Interface
 Status Registers
 Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
 1 mA Typical ICC Active Current in
Static Operation
Reset/Deep Power-Down Input
 0.2 µA ICCTypical
 Provides Reset for Boot Operations
Hardware Data Protection Feature
 Program/Erase Lockout during Power Transitions
Industry-Standard Surface Mount Packaging
 44-Lead PSOP: JEDEC ROM Compatible
ETOX™ IV Flash Technology




Specifications

Operating Temperature
During Read ........................... -40°C to +125°C
During Block Erase
and Word/Byte Program......... -40°C to +125°C
Temperature Under Bias ........ -40°C to +125°C
Storage Temperature..............-65°C to +125°C
Voltage on Any Pin
(except VCC, VPP, A9 and RP#)
with Respect to GND..............   -2.0V to +7.0V(1)
Voltage on Pin RP# or Pin A9
with Respect to GND..........  -2.0V to +13.5V(1,2)
VPP Program Voltage with Respect
to GND during Block Erase and
 Word/Byte Program...........  -2.0V to +14.0V(1,2)
VCC Supply Voltage
with Respect to GND..............    -2.0V to +7.0V(1)
Output Short Circuit Current................100 mA (3)


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