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A28F010

Features: Automotive Temperature Range:-40§Cto a125§CFlash Memory Electrical Chip-Erase1 Second Typical Chip-EraseQuick-Pulse Programming Algorithm10 ms Typical Byte-Program2 Second Chip-Program1,000 Erase/Program Cycles Minimum over Automotive Temperature Range12.0V g5% VPPHigh-Performance Read12...

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SeekIC No. : 004260033 Detail

A28F010: Features: Automotive Temperature Range:-40§Cto a125§CFlash Memory Electrical Chip-Erase1 Second Typical Chip-EraseQuick-Pulse Programming Algorithm10 ms Typical Byte-Program2 Second Chip-Program1,00...

A28F010 Data Sheet

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Part Number:
A28F010
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

Automotive Temperature Range:
-40§Cto a125§C
Flash Memory Electrical Chip-Erase
 1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
 10 ms Typical Byte-Program
2 Second Chip-Program
 1,000 Erase/Program Cycles Minimum over Automotive Temperature Range
12.0V g5% VPP
High-Performance Read
 120 ns Maximum Access Time
CMOS Low Power Consumption
 30 mA Maximum Active Current
 300 mA Maximum Standby Current
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
 g10% VCC Tolerance
 Maximum Latch-Up Immunity through EPI Processing
ETOXTM III Flash Nonvolatile Memory
 Technology
 EPROM-Compatible Process Base
 High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
 32-Pin Plastic DIP
 32-Lead PLCC


Application

Connection Diagram


Specifications

Operating Temperature
During Read                          - 40 to + 125(1)
During Erase/Program               - 40 to + 125
Temperature Under Bias            - 40 to + 125
Storage Temperature                  - 65 to a150
Voltage on Any Pin with
Respect to Ground                    - 2.0V to + 7.0V(2)
Voltage on Pin A9 with
Respect to Ground               - 2.0V to + 13.5V(2, 3)
VPP Supply Voltage with
Respect to Ground
During Erase/Program          - 2.0V to + 14.0V(2, 3)
VCC Supply Voltage with
Respect to Ground                      - 2.0V to a7.0V(2)
Output Short Circuit Current                   100 mA(4)
Maximum Junction Temperature (TJ)           +140




Description

Symbol Type Name and Function
A0A16 INPUT ADDRESS INPUTS for memory addresses. Addresses are internally
latched during a write cycle.
DQ0DQ7 INPUT/OUTPUT DATA INPUT/OUTPUT: Inputs data during memory write cycles;
outputs data during memory read cycles. The data pins are active high
and float to tri-state OFF when the chip is deselected or the outputs
are disabled. Data is internally latched during a write cycle.
CEÝ INPUT CHIP ENABLE: Activates the device's control logic, input buffers,
decoders and sense amplifiers. CEÝ is active low; CEÝ high
deselects the memory device and reduces power consumption to
standby levels.
OEÝ INPUT OUTPUT ENABLE: Gates the devices output through the data buffers
during a read cycle. OEÝ is active low.
WEÝ INPUT WRITE ENABLE: Controls writes to the control register and the array.
Write enable is active low. Addresses are latched on the falling edge
and data is latched on the rising edge of the WEÝ pulse.
Note: With VPP s 6.5V, memory contents cannot be altered.
VPP   ERASE/PROGRAM POWER SUPPLY for writing the command
register, erasing the entire array, or programming bytes in the array.
VCC   DEVICE POWER SUPPLY (5V g10%)
VSS   GROUND
NC   NO INTERNAL CONNECTION to device. Pin may be driven or left
floating.



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