Features: Automotive Temperature Range:-40§Cto a125§CFlash Memory Electrical Chip-Erase1 Second Typical Chip-EraseQuick-Pulse Programming Algorithm10 ms Typical Byte-Program2 Second Chip-Program1,000 Erase/Program Cycles Minimum over Automotive Temperature Range12.0V g5% VPPHigh-Performance Read12...
A28F010: Features: Automotive Temperature Range:-40§Cto a125§CFlash Memory Electrical Chip-Erase1 Second Typical Chip-EraseQuick-Pulse Programming Algorithm10 ms Typical Byte-Program2 Second Chip-Program1,00...
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Features: Intel SmartVoltage Technology 5V or 12V Program/Erase 5V Read OperationV...
Features: x8/x16 Input/Output Architecture A28F400BX-T, A28F400BX-B For High Performance and HighI...
Features: x8/x16 Input/Output Architecture A28F400BX-T, A28F400BX-B For High Performance and HighI...
Operating Temperature
During Read - 40 to + 125(1)
During Erase/Program - 40 to + 125
Temperature Under Bias - 40 to + 125
Storage Temperature - 65 to a150
Voltage on Any Pin with
Respect to Ground - 2.0V to + 7.0V(2)
Voltage on Pin A9 with
Respect to Ground - 2.0V to + 13.5V(2, 3)
VPP Supply Voltage with
Respect to Ground
During Erase/Program - 2.0V to + 14.0V(2, 3)
VCC Supply Voltage with
Respect to Ground - 2.0V to a7.0V(2)
Output Short Circuit Current 100 mA(4)
Maximum Junction Temperature (TJ) +140
Symbol | Type | Name and Function |
A0A16 | INPUT | ADDRESS INPUTS for memory addresses. Addresses are internally latched during a write cycle. |
DQ0DQ7 | INPUT/OUTPUT | DATA INPUT/OUTPUT: Inputs data during memory write cycles; outputs data during memory read cycles. The data pins are active high and float to tri-state OFF when the chip is deselected or the outputs are disabled. Data is internally latched during a write cycle. |
CEÝ | INPUT | CHIP ENABLE: Activates the device's control logic, input buffers, decoders and sense amplifiers. CEÝ is active low; CEÝ high deselects the memory device and reduces power consumption to standby levels. |
OEÝ | INPUT | OUTPUT ENABLE: Gates the devices output through the data buffers during a read cycle. OEÝ is active low. |
WEÝ | INPUT | WRITE ENABLE: Controls writes to the control register and the array. Write enable is active low. Addresses are latched on the falling edge and data is latched on the rising edge of the WEÝ pulse. Note: With VPP s 6.5V, memory contents cannot be altered. |
VPP | ERASE/PROGRAM POWER SUPPLY for writing the command register, erasing the entire array, or programming bytes in the array. | |
VCC | DEVICE POWER SUPPLY (5V g10%) | |
VSS | GROUND | |
NC | NO INTERNAL CONNECTION to device. Pin may be driven or left floating. |