93C66B

Features:

• Single supply 5.0V operation
• Low power CMOS technology
- 1 mA active current (typical)
- 1A standby current (maximum)
• 512x 8 bit organization (93C66A)
• 256x 16 bit organization (93C66B)
• Self-timed ERASE and WRITE cycles (including auto-erase)

• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial interface
• Device status signal during ERASE/WRITE cycles

• Sequential READ function
• 100,000 E/W cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP and SOIC packages
• Available for the following temperature ranges:

- Automotive (E): -40°C to +125°C

Pinout






Specifications

Parameter Name	Value
Density	4K bits (x16)
Max. Clock Freq.	2 MHz
Page Size (bytes)	1
Endurance	1,000,000
Op. Volt Range (V)	4.5 to 5.5
Temp Range (°C)	-40°C to +125°C

VCC ...................................................................................7.0V
All inputs and outputs w.r.t. VSS ................ -0.6V to VCC +1.0V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied.................-65°C to +125°C
Soldering temperature of leads (10 seconds) .............+300°C
ESD protection on all pins................................................4 kV





Description

The Microchip Technology Inc. 93C66A/B is a 4K-bit,low-voltage serial Electrically Erasable PROM. The device memory is configured as 512 x 8 bits (93C66A) or 256 x 16 bits (93C66B). Advanced CMOS technology makes this device ideal for low-power, nonvolatile memory applications. The 93C66A/B is available in standard 8-pin DIP and surface mount SOIC packages. 93C66A/B is only recommended for 5V automotive temperature applications. For all commercial and industrial temperature applications, the 93LC66A/B is recommended.