Schottky (Diodes & Rectifiers) 8A 45V
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Product : | Schottky Diodes | Peak Reverse Voltage : | 45 V |
Forward Continuous Current : | 8 A | Max Surge Current : | 140 A |
Configuration : | Single | Forward Voltage Drop : | 0.55 V |
Maximum Reverse Leakage Current : | 1000 uA | Operating Temperature Range : | - 65 C to + 125 C |
Mounting Style : | Through Hole | Package / Case : | DO-201AD |
Packaging : | Bulk |
Rating | Symbol | Max | Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRm VRWM VR |
45 | V |
Average Rectified Forward Current TL = 75°C (PsiJL = 12°C/W, P.C. Board Mounting, Note 2) |
IO | 8.0 | A |
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) |
IFSM | 140 | A |
Operating and Storage Junction Temperature Range (Reverse Voltage Applied) |
TJ,TSTG | −65 to +125 | |
Voltage Rate of Change (Rated VR) | dv/dt | 10 | V/ns |
80SQ045N employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. 80SQ045N is suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Technical/Catalog Information | 80SQ045N |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 45V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 550mV @ 8A |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1mA @ 45V |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mounting Type | Through Hole, Axial |
Package / Case | DO-201AD, Axial |
Packaging | Bulk |
Capacitance @ Vr, F | - |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 80SQ045N 80SQ045N |