Features: ` HIGHSPEED: tPD = 5 ns (TYP.) atVCC =5V` LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 oC` COMPATIBLEWITH TTL OUTPUTS: VIH =2V(MIN),VIL = 0.8V(MAX)` POWERDOWN PROTECTIONON INPUTS& OUTPUTS` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA(MIN)` BALANCEDPROPAGATIONDELAYS: tPLH tPHL`...
74VHCT32A: Features: ` HIGHSPEED: tPD = 5 ns (TYP.) atVCC =5V` LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 oC` COMPATIBLEWITH TTL OUTPUTS: VIH =2V(MIN),VIL = 0.8V(MAX)` POWERDOWN PROTECTIONON INPUTS& OU...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5to + 7.0 |
V |
VI |
DC Input Voltage |
-0.5to + 7.0 |
V |
VO |
DC Output Voltage (see note 1) |
-0.5to + 7.0 |
V |
VO |
DC Output Voltage (see note 2) |
-0.5toVCC+0.5 |
V |
IIK |
DC Input Diode Current |
-20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
Tstg |
Storage Temperature |
-65 to+150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
AbsoluteMaximumRatingsarethose values beyond whichdamage to the device may occur. Functional operation under these condition isnot implied.
1)VCC =0V
2) High or Low State
The 74VHCT32A is an advanced high-speed CMOS QUAD 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.
Power down protection of the 74VHCT32A is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
All inputs and outputs of the 74VHCT32A are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.