Features: ` HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 5V` LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA=25` COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN.), VIL = 0.8V (MAX)` POWER DOWN PROTECTION ON INPUTS & OUTPUTS` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN)` BALANCED PROPAGATION DELAY...
74VHCT20A: Features: ` HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 5V` LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA=25` COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN.), VIL = 0.8V (MAX)` POWER DOWN PROTECTION ON INPU...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to +7.0 |
V |
VI |
DC Input Voltage |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage (see note 1) |
-0.5 to +7.0 |
V |
VO |
DC Output Voltage (see note 2) |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
- 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
±25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
±50 |
mA |
Tstg |
Storage Temperature |
-65 to +150 |
|
TL |
Lead Temperature (10 sec) |
300 |
The 74VHCT20A is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.
Power down protection of the 74VHCT20A is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V since all inputs are equipped with TTL threshold.
All inputs and outputs of the 74VHCT20A are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.