74VHCT08A

Features:

 High speed: t_PD   5.0 ns (typ) at T_A   25
 High noise immunity: V_IH   2.0V, VIL   0.8V
 Power down protection is provided on all inputs and outputs
 Low noise: V_OLP   0.8V (max)
 Low power dissipation: I_CC   2 PA (max) @ TA   25
 Pin and function compatible with 74HCT08


Pinout




Specifications

Supply Voltage (V_CC)                                          -0.5V to +7.0V
DC Input Voltage (V_IN)                                       -0.5V to +7.0V
DC Output Voltage (V_OUT)
    (Note 3)                                                  -0.5V to V_CC + 0.5V
    (Note 4)                                                             -0.5V to 7.0V
Input Diode Current (I_IK)                                                 -20 mA
Output Diode Current (I_OK) (Note 5)                               ±20 mA
DC Output Current (I_OUT)                                                ±25 mA
DC V_CC/GND Current (I_CC)                                               ±50 mA
Storage Temperature (T_STG)                            -65qC to +150
Lead Temperature (T_L)
   (Soldering, 10 seconds)                                                   260


Description

The 74VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

The internal circuit of the 74VHCT08A is composed of 4 stages including buffer output, which provide high noise immunity and stable output.

Protection circuits of the 74VHCT08A ensure that 0V to 7V can be applied to the input pins without regard to the supply voltage and to the output pins with V_CC   0V. These circuits prevent
device destruction of the 74VHCT08A due to mismatched supply and input/ output voltages. This device can be used to interface 3V to 5V systems and two supply systems such as battery backup.