Features: HIGHSPEED: tPD = 4.8 ns (TYP.) atVCC= 5V LOWPOWERDISSIPATION: ICC =2 mA (MAX.) at TA =25 oC HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)POWERDOWN PROTECTIONON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA(MIN)BALANCEDPROPAGATIONDELAYS: tPLH @ tPHL OPERATINGVOLTAGERANGE:VCC (OPR)...
74VHC86: Features: HIGHSPEED: tPD = 4.8 ns (TYP.) atVCC= 5V LOWPOWERDISSIPATION: ICC =2 mA (MAX.) at TA =25 oC HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)POWERDOWN PROTECTIONON INPUTS SYMMETRICAL OUTPUT IMPE...
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Symbol |
PARAMETER |
Value
|
Unit |
VCC |
DC Supply Voltage |
-0.5to+7.0 |
V |
VI |
DC Input Voltage |
-0.5to+7.0 |
V |
VO |
DC Output Voltage |
-0.5toVCC+0.5
|
V |
IIK |
DC Input Diode Current |
- 20 |
mA |
IOK |
DC Output Diode Current |
± 25
|
mA |
IO |
DC Output Source/Sink Current |
± 75 |
mA |
VCC |
Lead Temperature (10 sec) |
300 |
°C |
VCC |
Storage Temperature Range |
65 to +150 |
°C |
The 74VHC86 is an advanced high-speed CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
All inputs and outputs of the 74VHC86 are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.