74VHC86

Features: HIGHSPEED: tPD = 4.8 ns (TYP.) atVCC= 5V LOWPOWERDISSIPATION: ICC =2 mA (MAX.) at TA =25 oC HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)POWERDOWN PROTECTIONON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA(MIN)BALANCEDPROPAGATIONDELAYS: tPLH @ tPHL OPERATINGVOLTAGERANGE:VCC (OPR)...

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74VHC86 Picture
SeekIC No. : 004251900 Detail

74VHC86: Features: HIGHSPEED: tPD = 4.8 ns (TYP.) atVCC= 5V LOWPOWERDISSIPATION: ICC =2 mA (MAX.) at TA =25 oC HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)POWERDOWN PROTECTIONON INPUTS SYMMETRICAL OUTPUT IMPE...

floor Price/Ceiling Price

Part Number:
74VHC86
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

HIGHSPEED: tPD = 4.8 ns (TYP.) atVCC= 5V
LOWPOWERDISSIPATION: ICC =2 mA (MAX.) at TA =25 oC
HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)
POWERDOWN PROTECTIONON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA(MIN)
BALANCEDPROPAGATIONDELAYS: tPLH @ tPHL
OPERATINGVOLTAGERANGE:VCC (OPR)= 2V to 5.5V
PINANDFUNCTION COMPATIBLEWITH74 SERIES86
IMPROVEDLATCH-UP IMMUNITY
LOWNOISE:VOLP = 0.8V(Max.)



Pinout

  Connection Diagram


Specifications

Symbol
PARAMETER
Value
Unit
VCC
DC Supply Voltage
-0.5to+7.0
V
VI
DC Input Voltage
-0.5to+7.0
V
VO
DC Output Voltage
-0.5toVCC+0.5
V
IIK
DC Input Diode Current
- 20
mA
IOK
DC Output Diode Current
± 25
mA
IO
DC Output Source/Sink Current
± 75
mA
VCC
Lead Temperature (10 sec)
300
°C
VCC
Storage Temperature Range
65 to +150
°C



Description

The 74VHC86 is an advanced high-speed CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

All inputs and outputs of the 74VHC86 are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.




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