Features: `HIGHSPEED: tPD = 3.3 ns (TYP.) atVCC= 5V`LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 `HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)`POWERDOWN PROTECTIONON INPUTS`SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA(MIN)`BALANCEDPROPAGATIONDELAYS: tPLH @ tPHL`OPERATINGVOLTAGERANGE: VCC (OPR...
74VHC20: Features: `HIGHSPEED: tPD = 3.3 ns (TYP.) atVCC= 5V`LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 `HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)`POWERDOWN PROTECTIONON INPUTS`SYMMETRICAL OUTPUT IMPED...
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`HIGHSPEED: tPD = 3.3 ns (TYP.) atVCC= 5V
`LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25
`HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)
`POWERDOWN PROTECTIONON INPUTS
`SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA(MIN)
`BALANCEDPROPAGATIONDELAYS: tPLH @ tPHL
`OPERATINGVOLTAGERANGE: VCC (OPR)= 2V to 5.5V
`PINANDFUNCTION COMPATIBLEWITH 74 SERIES20
`IMPROVEDLATCH-UP IMMUNITY
SYMBOL | PARAMETER | Value | UNIT |
VCC | Supply voltagee | 0.5 to+ 7.0 | V |
VI | DC Input Voltage(DIR, G) | 0.5 to+ 7.0 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | - 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ±25 | mA |
ICC or IGND | DC VCC or Ground Current | ± 50 | mA |
Tstg | Storage temperature | 65 to 150 | |
TL |
Lead Temperature (10 sec) | 300 |
The 74VHC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit of the 74VHC20 is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
All inputs and outputs of the 74VHC20 are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.