74VHC125

Features: High Speed: tPD=3.8 ns (typ) at VCC=5VLower power dissipation: ICC=4 A (max) at TA=25qCHigh noise immunity: VNIH=VNIL=28% VCC (min)Power down protection is provided on all inputsLow noise: VOLP=0.8V (max)Pin and function compatible with 74HC125PinoutSpecifications Supply Voltage (VC...

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74VHC125 Picture
SeekIC No. : 004251856 Detail

74VHC125: Features: High Speed: tPD=3.8 ns (typ) at VCC=5VLower power dissipation: ICC=4 A (max) at TA=25qCHigh noise immunity: VNIH=VNIL=28% VCC (min)Power down protection is provided on all inputsLow noise:...

floor Price/Ceiling Price

Part Number:
74VHC125
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

 High Speed: tPD=3.8 ns (typ) at VCC=5V
 Lower power dissipation: ICC =4 A (max) at TA=25qC
 High noise immunity: VNIH=VNIL=28% VCC (min)
 Power down protection is provided on all inputs
 Low noise: VOLP=0.8V (max)
 Pin and function compatible with 74HC125



Pinout

  Connection Diagram


Specifications

Supply Voltage (VCC) -0.5V to +7.0V
DC Input Voltage (VIN) -0.5V to +7.0V
DC Output Voltage (VOUT) -0.5V to VCC + 0.5V
Input Diode Current (IIK) -20 mA
Output Diode Current (IOK) ±20 mA
DC Output Current (IOUT) ±25 mA
DC VCC/GND Current (ICC) ±50 mA
Storage Temperature (TSTG) -65 to +150
Lead Temperature (TL)  
   (Soldering, 10 seconds) 260



Description

The 74VHC125 contains four independent non-inverting buffers with 3-STATE outputs. It is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology and achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

An input protection circuit of the 74VHC125 insures that 0V to 7V can be applied to the input pins without regard to the supply voltage.This device can be used to interface 5V to 3V systems and two supply systems such as battery backup. This circuit prevents device destruction due to mismatched supply and input voltages.




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