Features: `HIGHSPEED: tPD = 3.7 ns (TYP.) atVCC= 5V`LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 oC`HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)`POWERDOWN PROTECTIONON INPUTS`OPERATINGVOLTAGERANGE: VCC (OPR)= 2V to 5.5V`PINANDFUNCTION COMPATIBLEWITH 74 SERIES03`IMPROVEDLATCH-UP IMMUNITY`LOWNOISE:...
74VHC03: Features: `HIGHSPEED: tPD = 3.7 ns (TYP.) atVCC= 5V`LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 oC`HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)`POWERDOWN PROTECTIONON INPUTS`OPERATINGVOLTAGERANGE:...
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`HIGHSPEED: tPD = 3.7 ns (TYP.) atVCC= 5V
`LOWPOWERDISSIPATION: ICC =2 A (MAX.) at TA =25 oC
`HIGHNOISEIMMUNITY: VNIH=VNIL =28%VCC (MIN.)
`POWERDOWN PROTECTIONON INPUTS
`OPERATINGVOLTAGERANGE: VCC (OPR)= 2V to 5.5V
`PINANDFUNCTION COMPATIBLEWITH 74 SERIES03
`IMPROVEDLATCH-UP IMMUNITY
`LOWNOISE:VOLP = 0.8V(Max.)
SYMBOL | PARAMETER | Value | UNIT |
VCC | Supply voltagee | 0.5 to+ 7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | 25 | mA |
ICC or IGND | DC VCC or Ground Current | ± 50 | mA |
Tstg | Storage temperature | 65 to 150 | |
TL |
Lead Temperature (10 sec) | 300 |
The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.
This 74VHC03 can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver and in any other application requiring a current sink.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
All inputs and outputs of the 74VHC03 are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage.