Features: · HIGHSPEED: tPD = 4.1 ns (TYP.) atVCC= 3.3V· LOWPOWERDISSIPATION:ICC =4 mA (MAX.) at TA =25 oC· LOWNOISE:VOLP = 0.3 V (TYP.) at VCC = 3.3V· SYMMETRICAL OUTPUT IMPEDANCE:|IOH| = IOL = 4 mA(MIN)· BALANCEDPROPAGATIONDELAYS:tPLH @ tPHL· OPERATINGVOLTAGERANGE:VCC (OPR)= 2V to 3.6V· PINANDFUN...
74LVXU04: Features: · HIGHSPEED: tPD = 4.1 ns (TYP.) atVCC= 3.3V· LOWPOWERDISSIPATION:ICC =4 mA (MAX.) at TA =25 oC· LOWNOISE:VOLP = 0.3 V (TYP.) at VCC = 3.3V· SYMMETRICAL OUTPUT IMPEDANCE:|IOH| = IOL = 4 mA...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5to + 7.0 |
V |
VI |
DC Input Voltage |
-0.5to + 7.0 |
V |
VO |
DC Output Voltage |
-0.5toVCC+0.5 |
V |
IIK |
DC Input Diode Current |
- 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
Tstg |
Storage Temperature |
-65 to+150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
AbsoluteMaximumRatingsarethose values beyond whichdamage to the device may occur. Functional operation under these condition isnot implied.
The 74LVXU04 is a low voltage CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications.
As the internal circuit of the 74LVXU04 is composed of a single stage inverter, it can be used in analog application such as crystal oscillator.
It has better speed performance at 3.3V than 5V LS-TTL family combined with the true CMOS low power consumption.
Power down protection of the 74LVXU04 is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.