Features: ` Wide supply voltage range from 1.65 V to 5.5 V` High noise immunity` Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8B/JESD36 (2.7 V to 3.6 V).` ±24 mA output drive (VCC = 3.0 V)` ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-...
74LVC1G80: Features: ` Wide supply voltage range from 1.65 V to 5.5 V` High noise immunity` Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8B/JESD36 (2.7 V to 3.6 V).` ±2...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCC | supply voltage | -0.5 | +6.5 | V | |
IIK | input diode current | VI < 0 V | - | -50 | mA |
VI | input voltage | note 1 | -0.5 | +6.5 | V |
IOK | output diode current | VO > VCC or VO < 0 V | - | ±50 | mA |
VO | output voltage | active mode; note 1 |
-0.5 | VCC + 0.5 | V |
Power-down mode; note 1 | -0.5 | +6.5 | V | ||
IO | output source or sink current | VO = 0 V to VCC | - | ±50 | mA |
ICC, IGND | VCC or GND current | - | ±100 | mA | |
Tstg | storage temperature | -65 | +150 | °C | |
Ptot |
power dissipation | Tamb = -40 °C to +125 °C | - | 250 | mW |
The 74LVC1G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.
The 74LVC1G80 is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
The 74LVC1G80 provides a single positive-edge triggered D-type flip-flop.
Information on the data input is transferred to the Q output pin on the LOW-to-HIGH transition of the clock pulse.
The input pin D must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation.