74LVC1G32GV

The 74LVC1G32GV is one member of the 74LVC1G32 family which is designed as the high-performance, low-power, low-voltage, Si-gate CMOS device that is fully specified for partial power-down applications using Ioff, and this circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

Features of the 74LVC1G32GV are:(1)Wide supply voltage range from 1.65 V to 5.5 V; (2)High noise immunity; (3)Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V), JESD8-5 (2.3 V to 2.7 V) and JESD8B/JESD36 (2.7 V to 3.6 V).; (4)±24 mA output drive (VCC = 3.0 V); (5)CMOS low power consumption; (6)Latch-up performance exceeds 250 mA; (7)Direct interface with TTL levels; (8)Inputs accept voltages up to 5 V; (9)Multiple package options; (10)ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V and MM EIA/JESD22-A115-A exceeds 200 V.; (11)Specified from -40 °C to +85 °C and -40 °C to +125 °C.

The absolute maximum ratings of the 74LVC1G32GV can be summarized as:(1)supply voltage: -0.5 to +6.5 V;(2)input diode current: -50 mA;(3)input voltage: -0.5 to +6.5 V;(4)output diode current: ±50 mA;(5)output voltage active mode: -0.5 to VCC + 0.5 V;(6)output voltage Power-down mode: -0.5 to +6.5 V;(7)output diode current: ±50 mA;(8)VCC or GND current: ±100 mA;(9)storage temperature of the 74LVC1G32GV: -65 to +150 °C;(10)power dissipation: 250 mW. If you want to know more information such as the electrical characteristics about the 74LVC1G32GV, please download the datasheet in www.seekic.com or www.chinaicmart.com .