DescriptionThe 74LVC1G125GW is designed as one kind of high-performance, low-power, low-voltage, Si-gate CMOS device that is fully specified for partial power-down applications using Ioff. And this device provides one non-inverting buffer/line driver with 3-state output. Features of the 74LVC1G12...
74LVC1G125GW: DescriptionThe 74LVC1G125GW is designed as one kind of high-performance, low-power, low-voltage, Si-gate CMOS device that is fully specified for partial power-down applications using Ioff. And this ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The 74LVC1G125GW is designed as one kind of high-performance, low-power, low-voltage, Si-gate CMOS device that is fully specified for partial power-down applications using Ioff. And this device provides one non-inverting buffer/line driver with 3-state output.
Features of the 74LVC1G125GW are:(1)Wide supply voltage range from 1.65 V to 5.5 V; (2)High noise immunity; (3)±24 mA output drive (VCC = 3.0 V); (4)CMOS low power consumption; (5)Latch-up performance exceeds 250 mA; (6)Direct interface with TTL levels; (7)Inputs accept voltages up to 5 V; (8)Specified from -40 °C to +85 °C and -40 °C to +125 °C. If you want to know more information about the 74LVC1G125GW, please download the datasheet in www.seekic.com or www.chinaicmart.com .