74LV367N

The 74LV367N belongs to 74LV367 which is a low-voltage CMOS device and is pin and function compatible 74HC/HCT367 and it is a hex non-inverting buffer/line driver with 3-State outputs. The 3-State outputs (nY) are controlled by the output enable inputs (1OE, 2OE). A HIGH on nOE, causes the outputs to assume a high impedance OFF-state.

The features of 74LV367N can be summarized as (1)optimized for low voltage applications: 1.0 to 3.6V; (2)accepts TTL input levels between VCC = 2.7V and VCC = 3.6V; (3)typical VOLP (output ground bounce) < 0.8V @ VCC = 3.3V, Tamb = 25°C; (4)typical VOHV (output VOH undershoot) >2V @ VCC = 3.3V, Tamb = 25°C; (5)non-inverting outputs; (6)output capability: bus driver; (7)ICC category: MSI.

The absolute maximum ratings of 74LV367N are (1)VCC DC supply voltage: -0.5 to +4.6V; (2)±IIK DC input diode current(VI < -0.5 or VI > VCC + 0.5V): 20 mA; (3)±IOK DC output diode current(VO < -0.5 or VO > VCC + 0.5V): 50 mA; (4)±IO DC output source or sink current- standard outputs(-0.5V < VO < VCC + 0.5V): 35mA; (5)±IGND, ±ICC DC VCC or GND current for types with-standard outputs: 70mA; (6)Tstg storage temperature range of the 74LV367N: -65 to +150 °C; (7)Ptot power dissipation per package for temperature range: -40 to +125°C,plastic DIL above +70°C derate linearly with 12mW/K/plastic mini-pack (SO) above +70°C derate linearly with 8 mW/K/plastic shrink mini-pack (SSOP and TSSOP)above +60°C derate linearly with 5.5 mW/K: 750/500/400mW.(1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings of the 74LV367N only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.).