74LV126N

The 74LV126N belongs to 74LV126 family which is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT126. The 74LV126 consists of four non-inverting buffers/line drivers with 3-state outputs. The 3-state outputs (nY) are controlled by the output enable input (nOE). A HIGH at nOE causes the outputs to assume a high impedance OFF-state.

The features of 74LV126N can be summarized as (1)wide operating voltage: 1.0 to 5.5 V; (2)optimized for low voltage applications: 1.0 to 3.6 V; (3)accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V; (4)typical VOLP (output ground bounce) < 0.8 V at VCC = 3.3 V, Tamb = 25°C.; (5)typical VOHV (output VOH undershoot) > 2 V at VCC = 3.3 V, TAMB = 25°C; (6)output capability: standard; (7)ICC category: MSI

The absolute maximum ratings of 74LV126N are (1)VCC DC supply voltage: -0.5(MIN)/+7.0(MAX)V; (2)Tstg storage temperature range: -65 to +150°C; (3)±IIK DC input diode current(VI < -0.5 V; note 1): 20mA(MAX); (4)±IOK DC output diode current( VO <-0.5 V or VO > VCC+ 0.5 V; note 1): 50mA; (5)IO DC output source or sink current(-0.5 V < VO < VCC + 0.5 V): 35mA; (6)±IGND, ±ICC DC VCC or GND current for types with-standard outputs: 70mA; (7)PTOT power dissipation per package(for temperature range: -40 to +125°C) - plastic DIL(above +70°C derate linearly with 12 mW/K) - plastic mini-pack (SO) (SSOP and TSSOP)(above +70°C derate linearly with 8 mW/K)- plastic shrink mini-pack(above +60°C derate linearly with 5.5mW/K): 750/500/400mW.((NOTE: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the 74LV126N at these or any other conditions beyond those indicated under arecommended operating conditionso is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings of the 74LV126N may be exceeded if the input and output current ratings are observed).