DescriptionThe 74LV10N belongs to 74LV10 family which is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT10. The 74LV10 provides the 3-input NAND function. The features of 74LV10N can be summarized as (1)optimized for low voltage applications: 1.0 to 3.6 V; (2)ac...
74LV10N: DescriptionThe 74LV10N belongs to 74LV10 family which is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT10. The 74LV10 provides the 3-input NAND function. The fea...
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The 74LV10N belongs to 74LV10 family which is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT10. The 74LV10 provides the 3-input NAND function.
The features of 74LV10N can be summarized as (1)optimized for low voltage applications: 1.0 to 3.6 V; (2)accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V; (3)typical VOLP (output ground bounce) < 0.8 V at VCC = 3.3 V, Tamb = 25°C; (4)typical VOHV (output VOH undershoot) > 2 V at VCC = 3.3 V, Tamb = 25°C; (5)output capability: standard; (6)ICC category: SSI.
The absolute maximum ratings of 74LV10N are (1)VCC DC supply voltage: -0.5 to +4.6 V; (2)±IIK DC input diode current(VI <-0.5 or VI > VCC + 0.5V): 20mA; (3)±IOK DC output diode current(VO < -0.5 or VO > VCC + 0.5V): 50mA; (4)±IO DC output source or sink current -bus driver outputs(-0.5V < VO < VCC + 0.5V): 25mA; (5)±IGND, ±ICC DC VCC or GND current for types with bus driver outputs: 50mA; (6)Tstg storage temperature range: -65 to +150 °C; (7)power dissipation per package for temperature range: -40 to +125°C-plastic DIL(above +70°C derate linearly with 12mW/K)/-plastic mini-pack (SO)(above +70°C derate linearly with 8 mW/K)/-plastic shrink mini-pack (SSOP and TSSOP)(above +60°C derate linearly with 5.5 mW/K): 750/500/400mW.(1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the 74LV10N at these or any other conditions beyond those indicated under arecommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.)