Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 VMM EIA/JESD22-A115-A exceeds 200 V.· Balanced propagation delays· Very small 8 pins package.PinoutSpecifications ...
74HCT3G06: Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 VMM EIA/JESD22-A...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCC | supply voltage | -0.5 | +7.0 | V | |
IIK | input diode current | VI < -0.5 V or VI > VCC + 0.5 V; note 1 | - | ±20 | mA |
IOK | output diode current | VO < -0.5 V; note 1 | - | -20 | mA |
VO | output voltage | active mode; note 1 | -0.5 | VCC + 0.5 | V |
high-impedance mode; note 1 | -0.5 | 7.0 | V | ||
IO | output sink current | -0.5 V < VO < 7.0 V; note 1 | - | -25 | mA |
ICC, IGND | VCC or GND current | note 1 | - | 50 | mA |
Tstg | storage temperature | -65 | +150 | °C | |
PD | power dissipation | Tamb = -40 to +125 °C; note 2 | - | 300 | mW |
The 74HCT3G06 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A.
The 74HCT3G06 provides three inverting buffers.
The outputs of the 74HCT3G06 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.