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74HCT3G04

Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· Balanced propagation delays· Very small 8 pins package· Output capability: standard· ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds...

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SeekIC No. : 004250896 Detail

74HCT3G04: Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· Balanced propagation delays· Very small 8 pins package· Output capa...

74HCT3G04 Data Sheet

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Part Number:
74HCT3G04
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Wide supply voltage range from 2.0 to 6.0 V
· Symmetrical output impedance
· High noise immunity
· Low power dissipation
· Balanced propagation delays
· Very small 8 pins package
· Output capability: standard
· ESD protection:
    HBM EIA/JESD22-A114-A exceeds 2000 V
    MM EIA/JESD22-A115-A exceeds 200 V.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VCC supply voltage   -0.5 +7.0 V
IIK input diode current VI< -0.5 V or VI> VCC + 0.5 V; note 1 - ±20 mA
IOK output diode current VO< -0.5 V or VO> VCC + 0.5 V; note 1 - ±20 mA
IO output source or sink current -0.5 V < VO< VCC + 0.5 V; note 1 - 25 mA
ICC, IGND VCC or GND current note 1 - 50 mA
Tstg storage temperature   -65 +150 °C
PD power dissipation Tamb = -40 °C to +125 °C; note 2 - 300 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PDderates linearly with 8 mW/K.


Description

The 74HCT3G04 is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). Specified in compliance with JEDEC standard no. 7.

The 74HCT3G04 provides three inverting buffers.


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