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74HCT2G86

Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· Balanced propagation delays· Very small 8 pins package· ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.PinoutSpecifications ...

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SeekIC No. : 004250883 Detail

74HCT2G86: Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· Balanced propagation delays· Very small 8 pins package· ESD protect...

74HCT2G86 Data Sheet

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Part Number:
74HCT2G86
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Wide supply voltage range from 2.0 to 6.0 V
· Symmetrical output impedance
· High noise immunity
· Low power dissipation
· Balanced propagation delays
· Very small 8 pins package
· ESD protection:
   HBM EIA/JESD22-A114-A exceeds 2000 V
   MM EIA/JESD22-A115-A exceeds 200 V.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage   -0.5 +7.0 V
IIK input diode current VI < -0.5 V or VI > VCC + 0.5 V; note 1 - ±20 mA
IOK output diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1 - ±20 mA
IO output source or sink current -0.5 V < VO < VCC + 0.5 V; note 1 - 25 mA
ICC VCC or GND current note 1 - 50 mA
Tstg storage temperature   -65 +150 °C
PD
power dissipation per package Tamb = -40 to +125 °C; note 2 - 300 mW

Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.


Description

The 74HCT2G86 is a high-speed Si-gate CMOS device.

The 74HCT2G86 provides dual 2-input exclusive-OR gate.


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