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74HCT2G32

Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· Balanced propagation delays· Very small 8 pins package· Output capability: standard· ESD protection:HBM EIA/JESD22-A114-A exceeds 2000 VMM EIA/JESD22-A115-A exceeds 20...

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SeekIC No. : 004250881 Detail

74HCT2G32: Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· Balanced propagation delays· Very small 8 pins package· Output capa...

74HCT2G32 Data Sheet

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Part Number:
74HCT2G32
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Wide supply voltage range from 2.0 to 6.0 V
· Symmetrical output impedance
· High noise immunity
· Low power dissipation
· Balanced propagation delays
· Very small 8 pins package
· Output capability: standard
· ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC supply voltage  
-0.5
+7.0
V
IIK input diode current VI < -0.5 V or VI > VCC + 0.5 V;note 1
-
±20
mA
IOK output diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1
-
±20
mA
IO output source or sink current -0.5 V < VO < VCC + 0.5 V; note 1
-
25
mA
ICC,IGND VCC or GND current note 1
-
50
mA
Tstg storage temperature  
-65
+150
°C
PD power dissipation per package for temperature range from -40 to +125 °C;
note 2
-
300
mW


Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.




Description

The 74HCT2G32 is a high-speed Si-gate CMOS device.

The 74HCT2G32 provides the dual 2-input OR function.


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