74HCT2G00DC

The 74HCT2G00DC is a high-speed Si-gate CMOS device. It provides the 2-input NAND function. The features of 74HCT2G00DC are: (1)Wide supply voltage range from 2.0 to 6.0 V; (2)Symmetrical output impedance; (3)High noise immunity; (4)Low power dissipation; (5)Balanced propagation delays; (6)Very small 8 pins package; (7)Output capability is standard; (8)ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V, MM EIA/JESD22-A115-A exceeds 200 V.

The following is about the maximum ratings of 74HCT2G00DC: (1)Drain-Source Voltage: 800 Volts ; (2)Continuous Drain Current @ TC = 25°C: 27 Amps ; (3)Pulsed Drain Current : 108 Amps; (4)Gate-Source Voltage Continuous: ±30 Volts ; (5)Gate-Source Voltage Transient: ±40 ; (6)Total Power Dissipation @ TC = 25°C: 520 Watts ; (7)Linear Derating Factor: 4.16 W/°C ; (8)Operating and Storage Junction Temperature Range: -55to150 °C ; (9)Lead Temperature: 0.063" from Case for 10 Sec: 300 ; (10)Avalanche Current (Repetitive and Non-Repetitive): 27 Amps ; (11)Repetitive Avalanche Energy : 50 mJ ; (12)Single Pulse Avalanche Energy : 2500 mJ.

The electrical characteristics of the 74HCT2G00DC are: (1)high-level input voltage: 2.0V min and 1.2V max; (2)low-level output voltage: 2.0V min and 0.5V max; (3)high-level output voltage: 2.0V min and 2.0V max at VI=VIH or VIL, IO=-20A; (4)low-level output voltage: 2.0V min and 0.1V max at VI=VIH or VIL, IO=20A; (5)quiescent supply current: 10A max at VI=VCC or GND, IO=0.