74HCT1G66

Features:

• Wide operating voltage range from 2.0 to 9.0 V
• Very low ON-resistance:
   45 Ω (typical) at V_CC = 4.5 V
   30 Ω (typical) at V_CC = 6.0 V
   25 Ω (typical) at V_CC = 9.0 V.
• High noise immunity
• Low power dissipation
• Very small 5 pins package
• Output capability: non standard.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCC	supply voltage		−0.5	+11.0	V
IIK	input diode current	VI <− 0.5 V or VI > VCC + 0.5 V	−	±20	mA
ISK	switch diode current	VS <− 0.5 V or VS > VCC + 0.5 V	−	±20	mA
IS	switch source or sink current	−0.5 V < VS < VCC + 0.5 V	−	±25	mA
ICC	VCC or GND current		−	±50	mA
Tstg	storage temperature		−65	+150
PD	power dissipation per package	or temperature range from −40 to + 125 ; note 2	−	200	mW
PS	power dissipation per switch		−	100	mW

Notes
1. To avoid drawing V_CC current out of pin Z, when switch current flows in pin
    Y,   the voltage drop across the bidirectional switch must not exceed 0.4 V.
    If the switch current flows into pin Z, no V_CC current will flow out of terminal
    Y. In this case there is no limit for the voltage drop across the switch, but
    the voltage at pins Y and Z may not exceed V_CC or GND.
2. Above 55 the value of P_D derates linearly with 2.5 mW/K.


Description

The 74HCT1G66 is a high-speed Si-gate CMOS device.

The 74HCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E).When pin E is LOW, the analog switch is turned off.

The non standard output currents are equal compared to the 74HCT1G66.