Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPinoutSpecificationsLimiting values in accordance with the Absolute Maximum System (IEC 134)Voltages are referenced to GND (ground = 0 V) SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS VCC D...
74HCT03: Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPinoutSpecificationsLimiting values in accordance with the Absolute Maximum System (IEC 134)Voltages ar...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
SYMBOL | PARAMETER | MIN. | MAX. | UNIT | CONDITIONS |
VCC | DC supply voltage | -0.5 | +7 | V | |
VO | DC output voltage | -0.5 | +7 | V | |
IIK | DC input diode current | 20 | mA | for VI < -0.5 V or VI > VCC + 0.5 V | |
-IOK | DC output diode current | 20 | mA | for VO < -0.5 V | |
-IO | DC output sink current | 25 | mA | for - 0.5 V < VO | |
±ICC; ±IGND |
DC VCC or GND current | 50 | mA | ||
Tstg | storage temperature range | -65 | +150 | °C | |
Ptot |
power dissipation per package plastic DIL |
750 | mW | for temperature range; -40 to +125 °C 74HC/HCT above +70 °C: derate linearly with 12 mW/K | |
plastic mini-pack (SO) | 500 | mW | above +70 °C: derate linearly with 8 mW/K |
The 74HCT03 is high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.
The 74HCT03 provide the 2-input NAND function.
The 74HCT03 has open-drain N-transistor outputs, which are not clamped by a diode connected to VCC. In the OFF-state, i.e. when one input is LOW, the output may be pulled to any voltage between GND and VOmax. This allows the device to be used as a LOW-to-HIGH or HIGH-to-LOW level shifter. For digital operation and OR-tied output applications, these devices must have a pull-up resistor to establish a logic HIGH level.