DescriptionThe 74HC74A is one of the 74HC74 subseries.The 74HC74A is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL(LSTTL). They are specified in compliance with JEDEC standard no. 7A.The 74HC74A are dual positive-edge triggered, D-type flip-flops with individua...
74HC74A: DescriptionThe 74HC74A is one of the 74HC74 subseries.The 74HC74A is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL(LSTTL). They are specified in compliance with ...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
The 74HC74A is one of the 74HC74 subseries.The 74HC74A is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL(LSTTL). They are specified in compliance with JEDEC standard no. 7A.The 74HC74A are dual positive-edge triggered, D-type flip-flops with individual data (D) inputs, clock (CP) inputs,set (SD) and reset (RD) inputs; also complementary Q and Q outputs.The set and reset are asynchronous active LOW inputs and operate independently of the clock input. Information on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock pulse. The D inputs must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation. Schmitt-trigger action in the clock input makes the circuit highly tolerant to slower clock rise and fall times.
Features of the 74HC74A are:(1)Wide supply voltage range from 2.0 to 6.0 V;(2)Symmetrical output impedance;(3)High noise immunity;(4)Low power dissipation;(5)Balanced propagation delays;(6)ESD protection:HBM EIA/JESD22-A114-A exceeds 2000 V,MM EIA/JESD22-A115-A exceeds 200 V.
The absolute maximum ratings of the 74HC74A can be summarized as:(1)supply voltage:-0.5 to +7.0V;(2)input diode current:±20mA;(3)output diode current:±20mA;(4)output source or sink current:±25mA;(5)VCC or GND current:±100mA;(6)storage temperature:-65 to +150°C;(7)power dissipation:500mW.