74HC3G14DP

The 74HC3G14DP is one member of the 74HC3G14 family which designed as the high-speed Si-gate CMOS device with following features:(1)wide supply voltage range from 2.0 to 6.0 V;(2)high noise immunity;(3)low power dissipation;(4)balanced propagation delays;(5)unlimited input rise and fall times;(6)very small 8 pins package;(7)ESD protection:HBM EIA/JESD22-A114-A exceeds 2000 V and MM EIA/JESD22-A115-A exceeds 200 V;(8)specified from -40 to +85 °C and -40 to +125 °C. And this device can be used in wave and pulse shapers for highly noisy environments; astable multivibrators and monostable multivibrators.

The absolute maximum ratings of the 74HC3G14DP can be summarized as:(1)supply voltage:-0.5 to +7.0 V;(2)input diode current:±20 mA;(3)output diode current:±20 mA;(4)output source or sink current:25 mA;(5)Vcc or GND current:50 mA;(6)storage temperature:-65 to +150 °C;(7)power dissipation:300 mW. If you want to know more information such as the electrical characteristics about the 74HC3G14DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .