Features: • Wide supply voltage range from 2.0 to 6.0 V• High noise immunity• Low power dissipation• Balanced propagation delays• Unlimited input rise and fall times• Very small 8 pins package• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JE...
74HC3G14: Features: • Wide supply voltage range from 2.0 to 6.0 V• High noise immunity• Low power dissipation• Balanced propagation delays• Unlimited input rise and fall times...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCC | supply voltage | −0.5 | +7.0 | V | |
IIK | input diode current | VI < −0.5 V or VI >VCC + 0.5 V; note 1 | − | ±20 | mA |
IOK | output diode current | VO < −0.5 V or VO >VCC + 0.5 V; note 1 | − | ±20 | mA |
IO | output source or sink current | −0.5V<VO <VCC + 0.5 V; note 1 | − | 25 | mA |
ICC | VCC or GND current | note 1 | − | 50 | mA |
Tstg | storage temperature | −65 | +150 | ||
PD | power dissipation | Tamb = −40 to +125 ; note 2 | − | 300 | mW |
The 74HC3G14 is a high-speed Si-gate CMOS device.
The 74HC3G14 provides three inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.