Features: • Wide supply voltage range from 2.0 to 6.0 V• High noise immunity• Low power dissipation• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.• Multiple package options• Specified from −40 to +85 and −40...
74HC3G07: Features: • Wide supply voltage range from 2.0 to 6.0 V• High noise immunity• Low power dissipation• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCC | supply voltage | −0.5 | +7.0 | V | |
IIK | input diode current | VI < −0.5 V or VI >VCC + 0.5 V | − | ±20 | mA |
IOK | output diode current | VO < −0.5 V | − | -20 | mA |
VO | output voltage | active mode; note 1 | −0.5 | VCC + 0.5 | V |
high-impedance mode; note 1 | −0.5 | 7.0 | V | ||
IO | output source or sink current | −0.5 V < VO < 7.0 V | − | -25 | mA |
ICC | VCC or GND current | note 1 | − | 50 | mA |
Tstg | storage temperature | −65 | +150 | ||
PD | power dissipation | Tamb = −40 to +125 ; note 2 | − | 300 | mW |
The 74HC3G07 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A.
The 74HC3G07 provides three non-inverting buffers.
The outputs of the 74HC3G07 devices are open drains and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this devicemust have a pull-up resistor to establish a logic HIGH-level.