Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 VMM EIA/JESD22-A115-A exceeds 200 V.· Balanced propagation delays· Very small 8 pins package.PinoutSpecifications ...
74HC3G06: Features: · Wide supply voltage range from 2.0 to 6.0 V· Symmetrical output impedance· High noise immunity· Low power dissipation· ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 VMM EIA/JESD22-A...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCC | supply voltage | -0.5 | +7.0 | V | |
IIK | input diode current | VI < -0.5 V or VI > VCC + 0.5 V; note 1 | - | ±20 | mA |
IOK | output diode current | VO < -0.5 V; note 1 | - | -20 | mA |
VO | output voltage | active mode; note 1 | -0.5 | VCC + 0.5 | V |
high-impedance mode; note 1 | -0.5 | 7.0 | V | ||
IO | output sink current | -0.5 V < VO < 7.0 V; note 1 | - | -25 | mA |
ICC, IGND | VCC or GND current | note 1 | - | 50 | mA |
Tstg | storage temperature | -65 | +150 | °C | |
PD | power dissipation | Tamb = -40 to +125 °C; note 2 | - | 300 | mW |
The 74HC3G06/74HCT3G06 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A.
The 74HC3G06/74HCT3G06 provides three inverting buffers.
The outputs of the 74HC3G06; 74HCT3G06 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.