Features: · Wide supply voltage range from 2.0 to 6.0 V· High noise immunity· Low power dissipation· Balanced propagation delays· Unlimited input rise and fall times· Very small 6 pins package.Application· Wave and pulse shapers for highly noisy environments· Astable multivibrators· Monostable mul...
74HC2G14: Features: · Wide supply voltage range from 2.0 to 6.0 V· High noise immunity· Low power dissipation· Balanced propagation delays· Unlimited input rise and fall times· Very small 6 pins package.Appli...
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Features: · Output capability: standard· ICC category: SSIPinoutDescription The 74HC/HCT02 are hig...
Features: · Level shift capability· Output capability: standard (open drain)· ICC category: SSIPin...
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCC | supply voltage |
-0.5 |
+7.0 |
V | |
IIK | input diode current | VI < -0.5 V or VI > VCC + 0.5 V;note 1 |
- |
±20 |
mA |
IOK | output diode current | VO < -0.5 V or VO > VCC + 0.5 V; note 1 |
- |
±20 |
mA |
IO | output source or sink current | -0.5 V < VO < VCC + 0.5 V; note 1 |
- |
25 |
mA |
ICC,IGND | VCC or GND current | note 1 |
- |
50 |
mA |
Tstg | storage temperature |
-65 |
+150 |
°C | |
PD | power dissipation per package | for temperature range from -40 to +125 °C; note 2 |
- |
300 |
mW |
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.
The 74HC2G14 is a high-speed Si-gate CMOS device.
The 74HC2G14 provides two inverting buffers with Schmitt-trigger action. The 74HC2G14 is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.