74FCT16646CT

Features: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement forABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1A (max.) ESD > 2000V per MIL-STD-883, Method 3015;> 200V using machine model (C = 200pF, R = 0) Packages include 25 mil pitch SS...

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SeekIC No. : 004250124 Detail

74FCT16646CT: Features: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement forABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1A (max.) ESD > 2000V per MIL-ST...

floor Price/Ceiling Price

Part Number:
74FCT16646CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for
ABT functions
Typical tSK(o) (Output Skew) < 250ps
Low input and output leakage 1A (max.)
ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
Packages include 25 mil pitch SSOP, 19.6 mil pitch
TSSOP, 15.7 mil pitch TVSOP and 25 mil pitch Cerpack
Extended commercial range of -40°C to +85°C
VCC = 5V ±10%
High drive outputs (-32mA IOH , 64mA IOL)
Power off disable outputs permit "live insertion"
Typical VOLP (Output Ground Bounce) < 1.0V at
VCC = 5V, TA = 25°C



Pinout

  Connection Diagram




Specifications

Symbol

Description

Max.

Unit

VTERM(2)

Terminal Voltage with Respect to
GND

0.5 to +7.0

V

VTERM(3)

Terminal Voltage with Respect to
GND

0.5 to
VCC +0.5

V

TSTG

Storage Temperature

65 to +150

°C

IOUT

DC Output Current

60 to +120

mA


NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. All device terminals except FCT162XXXT Output and I/O terminals.
3. Output and I/O terminals for FCT162XXXT.




Description

The 74FCT16646CT 16-bit registered transceivers are built using advanced dual metal CMOS technology. These high-speed, low-power devices are organized as two independent 8-bit bus transceivers with 3-state D-type registers.The control circuitry is organized for multiplexed transmission of data between A bus and B bus either directly or from the internal storage registers. Each 8-bit transceiver/register features direction control (xDIR), over-riding Output Enable control (xOE) and Select lines (xSAB and xSBA) of the 74FCT16646CT to select either real-time data or stored data. Separate clock inputs are provided for A and B port registers. Data on the A or B data bus, or both, can be stored in the internal registers by the LOW-to-HIGH transitions at the appropriate clock pins. Flowthrough organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.

The 74FCT16646CT is ideally suited for driving high-capacitance loads and low-impedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.

The 74FCT16646CT has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot, and controlled output fall timesreducing the need for external series terminating resistors. The IDT54/74FCT162646T/AT/CT/ET are plug-in replacements for the IDT54/74FCT16646T/AT/CT/ET and 54/74ABT16646 for on-board bus interface applications.




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