Features: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1A (max.) ESD > 2000V per MIL-STD-883, Method 3015;> 200V using machine model (C = 200pF, R = 0) Packages include 25 mil pitch S...
74FCT16543T/AT/CT/ET: Features: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1A (max.) ESD > 2000V per MIL-S...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: Std., A and C speed gradesLow input and output leakage ?1A (max.)CMOS power levelsTrue T...
Features: Std., A and C speed gradesLow input and output leakage ?1A (max.)CMOS power levelsTrue T...
0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for ABT functions
Typical tSK(o) (Output Skew) < 250ps
Low input and output leakage 1A (max.)
ESD > 2000V per MIL-STD-883, Method 3015;> 200V using machine model (C = 200pF, R = 0)
Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP, 15.7 mil pitch TVSOP and 25 mil pitch Cerpack
Extended commercial range of -40°C to +85°C
VCC = 5V ±10%
High drive outputs (-32mA IOH, 64mA IOL)
Power off disable outputs permit "live insertion"
Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, TA = 25°C
Symbol |
Description |
Max. |
Unit |
VTERM(2) |
Terminal Voltage with Respect to |
0.5 to +7.0 |
V |
VTERM(3) |
Terminal Voltage with Respect to |
0.5 to |
V |
TSTG |
Storage Temperature |
65 to +150 |
°C |
IOUT |
DC Output Current |
60 to +120 |
mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. All device terminals except FCT162XXXT Output and I/O terminals.
3. Output and I/O terminals for FCT162XXXT.
The 74FCT16543T/AT/CT/ET 16-bit latched transceivers are built using advanced dual metal CMOS technology. These high-speed, low-power devices are organized as two independent 8-bit D-type latched transceivers with separate input and output control to permit independent control of data flow in either direction. For example, the Ato-B Enable (xCEAB) of the 74FCT16543T/AT/CT/ET must be LOW in order to enter data from the A port or to output data from the B port. xLEAB controls the latch function. When xLEAB is LOW, the latches are transparent. A subsequent LOW-to-HIGH transition of xLEAB signal puts the A latches in the storage mode. xOEAB performs output enable function on the B port. Data flow from the B port to the A port is similar but requires using xCEBA, xLEBA, and xOEBA inputs. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.
The 74FCT16543T/AT/CT/ET is ideally suited for driving high-capacitance loads and low-impedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.
The 74FCT16543T/AT/CT/ET has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot, and controlled output fall timesreducing the need for external series terminating resistors. The 74FCT16543T/AT/CT/ET are plug-in replacements for the 74FCT16543T/AT/CT/ET for on-board bus interface applications.