74FCT16373ET

0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for ABT functions
Typical tSK(o) (Output Skew) < 250ps
Low input and output leakage 1A (max.)
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP,15.7 mil pitch TVSOP and 25 mil pitch Cerpack
Extended commercial range of -40°C to +85°C
V_CC = 5V `10%
High drive outputs (-32mA I_OH, 64mA I_OL)
Power off disable outputs permit "live insertion"
Typical VOLP (Output Ground Bounce) < 1.0V at V_CC = 5V, T_A = 25°C

The 74FCT16373ET 16-bit transparent D-type latches are built using advanced dual metal CMOS technology. These high-speed, low-power latches are ideal for temporary storage of data. They can   beused for implementing memory address latches, I/O ports,and bus drivers. The Output Enable and Latch Enable controls are organized to operate each device as two 8-bit latches, or one 16-bit latch. Flow-through organization of signal pins simplifies layout. All inputs of the 74FCT16373ET are designed with hysteresis for improved noise margin.

The 74FCT16373ET is videally suited for driving high-capacitance loads and impedance backplanes.  The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane
drivers.

The 74FCT16373ET have balanced output drive with current limiting resistors. This offers low ground bounce,
minimal undershoot, and controlled output fall times reducing the need for external series terminating resistors. The 74FCT16373ET is plug-in replacements for the FCT16373T/AT/CT/ET and ABT16373 for on-board interface applications.