Features: • 0.5 MICRON CMOS Technology• Typical tSK(o) (Output Skew) < 250ps• Low input and output leakage 1A (max.)• ESD > 2000V per MIL-STD-883, Method 3015;> 200V using machine model (C = 200pF, R = 0)• Packages include 25 mil pitch SSOP, 19.6 mil pitch TS...
74FCT162701T: Features: • 0.5 MICRON CMOS Technology• Typical tSK(o) (Output Skew) < 250ps• Low input and output leakage 1A (max.)• ESD > 2000V per MIL-STD-883, Method 3015;> 200V...
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Features: Std., A and C speed gradesLow input and output leakage ?1A (max.)CMOS power levelsTrue T...
Features: Std., A and C speed gradesLow input and output leakage ?1A (max.)CMOS power levelsTrue T...
Symbol | Description | Max. | Unit |
VTERM(2) | Terminal Voltage with Respect to GND |
0.5 to +7.0 | V |
VTERM(3) | Terminal Voltage with Respect to GND |
0.5 to VCC +0.5 |
V |
TSTG | Storage Temperature | 65 to +150 | °C |
IOUT | DC Output Current | 60 to +120 | mA |
The 74FCT162701T is an 18-bit Read/Write buffer with a four deep FIFO and a read-back latch. It can be used as a read/write buffer between a CPU and memory or to interface a high-speed bus and a slow peripheral. The Ato-B (write) path has a four deep FIFO for pipelined operations. The FIFO can be reset and a FIFO full condition is indicated by the full flag (FF). The B-to-A (read) path has a latch. A HIGH on LE, allows data to flow transparently from B-to-A. A LOW on LE allows the data to be latched on the falling edge of LE.
The 74FCT162701T has a balanced output drive with series termination. This provides low ground bounce,minimal undershoot and controlled output edge rates.