Position: Home  > All Categories> Integrated Circuits (ICs) > 60N06

60N06

Features: * RDS(ON) = 18m @VGS = 10 V* Ultra low gate charge ( typical 39 nC )* Fast switching capability* Low reverse transfer Capacitance (CRSS= typical 115 pF )* Avalanche energy Specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT ...

product image

60N06 Picture
See larger image
SeekIC No. : 004235027 Detail

60N06: Features: * RDS(ON) = 18m @VGS = 10 V* Ultra low gate charge ( typical 39 nC )* Fast switching capability* Low reverse transfer Capacitance (CRSS= typical 115 pF )* Avalanche energy Specified* Impro...

60N06 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
60N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* RDS(ON) = 18m @VGS = 10 V
* Ultra low gate charge ( typical 39 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 115 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness




Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current TC = 25°C
ID
60
A
TC = 100°C
39
A
Pulsed Drain Current (Note 1)
IDM
120
A
Avalanche Energy Single Pulsed (Note 2)
EAS
1000
mJ
Repetitive (Note 1)
EAR
180
mJ
Total Power Dissipation
PD
120
W
Junction Temperature
TJ
+175
Storage Temperature
TSTG
-55 ~ +175


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
         Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Tools
TCP202
G084SN05 V.3
Optical Inspection Equipment
AA924
A21K4B
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more