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60N035

Features: • Critical DC Electrical parameters specified at elevated Temp.• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser• Super high density cell design for extremely low RDS(ON)Specifications Symbol Parameter Ma...

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SeekIC No. : 004235026 Detail

60N035: Features: • Critical DC Electrical parameters specified at elevated Temp.• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser• ...

60N035 Data Sheet

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Part Number:
60N035
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Critical DC Electrical parameters specified at elevated Temp.
• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser
• Super high density cell design for extremely low RDS(ON)


Specifications

Symbol Parameter Max Unit
ID Drain Current 60 A
Continues
Pulsed 180
VDSS Drain-Source Voltage 30 V
VGSV Gate Source Voltage ±20 V
Total PD PowerDissipation @ TC =25°C 50 V
Derate above 25°C 0.4 W
TJ

 -Operating and Storage -65 to 175 W/°C
TSTG Temperature Range °C



Description

The Bay Linear n-channel power field effect transistors 60N035 are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts




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