54F413DM

Storage Temperature ........................................-65 to +150
Ambient Temperature under Bias ......................-55 to +125
Junction Temperature under Bias ......................-55 to +175
Plastic ................................................................-55 to +150
VCC Pin Potential to
Ground Pin ........................................................-0.5V to +7.0V
Input Voltage (Note 2) ......................................-0.5V to +7.0V
Input Current (Note 2) ......................................-30 mA to +5.0 mA
Voltage Applied to Output
in HIGH State (with VCC e 0V)
Standard Output ...............................................-0.5V to VCC
TRI-STATEÉ Output ............................................-0.5V to +5.5V
Current Applied to Output
in LOW State (Max) twice the rated IOL (mA)

Note :
1: Absolute maximum ratings are values beyond which the device may  be damaged or have its useful life impaired. Functional operation under these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

The 54F413DM is an expandable fall-through type high-speed First-In First-Out (FIFO) buffer memory organized as 64 words by four bits. The 4-bit input and output registers record and transmit, respectively, asynchronous data in parallel form. Control pins on the input and output allow for handshaking and expansion. The 4-bit wide, 62-bit deep fallthrough stack of 54F413DM has self-contained control logic.