4MbitSPI

Features: • Single 3.0-3.6V Read and Write Operations• Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3• 33 MHz Max Clock Frequency• Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention• Low Power Consumption...

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SeekIC No. : 004231810 Detail

4MbitSPI: Features: • Single 3.0-3.6V Read and Write Operations• Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3• 33 MHz Max Clock Frequency• Superior Reliability End...

floor Price/Ceiling Price

Part Number:
4MbitSPI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Single 3.0-3.6V Read and Write Operations
• Serial Interface Architecture
    SPI Compatible: Mode 0 and Mode 3
• 33 MHz Max Clock Frequency
• Superior Reliability
    Endurance: 100,000 Cycles (typical)
    Greater than 100 years Data Retention
• Low Power Consumption:
    Active Read Current: 7 mA (typical)
    Standby Current: 8 µA (typical)
• Flexible Erase Capability
    Uniform 4 KByte sectors
    Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
    Chip-Erase Time: 70 ms (typical)
    Sector- or Block-Erase Time: 18 ms (typical)
    Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
    Decrease total chip programming time over Byte-Program operations
• End-of-Write Detection
    Software Status
• Hold Pin (HOLD#)
    Suspends a serial sequence to the memory without deselecting the device
• Write Protection (WP#)
    Enables/Disables the Lock-Down function of the status register
• Software Write Protection
    Write protection through Block-Protection bits in status register
• Temperature Range
    Commercial: 0°C to +70°C
    Industrial: -40°C to +85°C
    Extended: -20°C to +85°C
• Packages Available
8-lead SOIC 150 mil body width
for SST25LF020A
8-lead SOIC 200 mil body width
for SST25LF040A
8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant



Specifications

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . .1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 mA



Description

SST25LF020A features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF020A SPI serial flash memories are manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST25LF020A devices significantly improve performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25LF020A devices operate with a single 3.0- 3.6V power supply.

The SST25LF020A devices are offered in an 8-lead SOIC 150 mil body width (SA) package. The SST25LF020A devices are offered in an 8-lead SOIC 200 mil body width (S2A) package. All densities are offered in the 8-contact WSON package. See Figure 1 for the pin assignments.




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